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HIP4082IBZ: A Half-Bridge FET Gate Driver

HIP4082IBZ is a half-bridge or H-Bridge FET gate driver by Renesas Electronics America Incorporated. The company manufactured this gate driver to drive or increase the performance of circuit boards.

Read this comprehensive article to get an idea of how it works and every other thing in-between.

HIP4082IBZ as a Gate Driver

Gate drivers are a part of the Power Management Integrated Circuits (PMICs). Like the other PMICs, they help to optimize the target device, application or circuit board for the best power usages.

The gate driver also aids the isolation, bootstrapping, amplification and reference shifting capabilities of the target devices.

One thing is outstanding in a gate driver’s performance – it can function alone, hence, the isolation in most cases. And for a gate driver to make the most out of the performance, if often interfaces or distributes the signals from a control device in a power-converting device to a semiconductor device – which can either be an IGBT or a FET.

A half-bridge is a type of inverter or gate driver, which helps in driving the gates of the low-side and high-side N-channel MOSFETs. This driver paves the way for a low output impedance to come in and drive the signals from the one part to the other.

This process does not only reduce switching losses due to the fast-switching time, but also reduces the chances of getting conduction-related losses.

The N-Channel MOSFETs Concept


Most half-bridges use an N-channel MOSFET – but why? As Homemade Circuits pointed out, the role of an N-channel MOSFET in a half-bridge is to bridge the gap, following the absence of center top transformers.

To that end, HIP4082IBZ’s N-channel helps to improve the performance of the MOSFETs.

However, some challenges are feasible because of the inability to drive the higher or upper sides of the MOSFETs. The main challenge here is the use of 4 channels at the topology; a composition that inhibits the MOSFET’s performance, in the sense that the MOSFETs now have higher loads resistance at the source terminal.

Therefore, it is imperative for the MOSFETs to be freed to function optimally. That necessitated the need for a higher voltage.

HIP4082IBZ’s Higher Voltage: What You Need to Know

The need for a higher voltage to drive the MOSFETs’ performance is because of the need to switch the higher topology further. To make that switch, the voltage should be above the available supply voltage.

That informs the reason behind HIP4082IBZ’s supply voltage that ranges between 8.5 volts and 15 volts.

Switchable Frequencies

Besides the higher voltage, HIP4082IBZ’s half-bridge FET gate driver can also be increased in terms of the operating frequencies. Using the user-programmable dead times ranging between 0.1 to 4.5µs.

The broader selections of dead times pave the wave for the onward configuration of the half-bridge to support higher frequency switching up to 200kHz.

Flexible Inputs

HIP4082IBZ also supports a flexible input protocol, which comes in handy for driving every possible combination on the circuit board.

There is an exception though. The combinations that don’t tow this line tend to use the shoot-through protection/condition.

Independent Driver

HIP4082IBZ doubles as a full and half-bridge gate driver, thanks to the independent driver for the N-channel FET. Therefore, you can configure it to work for both the full and the half-bridge applications.

Undervoltage Protection

As much HIP4082IBZ looks to increase the gate driver’s performance, it also takes note not to allow it slip below performance. To that end, it uses an undervoltage protection feature to keep the applications active.

The undervoltage protection protects the target applications from below-the-par performance. The core functions here are the VDD Rising Undervoltage Threshold and the VDD Falling Undervoltage Threshold.

Suitable Applications

The ideal applications to use HIP4082IBZ are the ones dedicated to moderate power level usage. On its part, HIP4082IBZ uses an 80-volt operating capacity to facilitate the following applications:

  • Peripherals
  • UPS systems
  • Switching power amplifiers
  • DC motor controls
  • Battery powered vehicles
  • Full bridge power supplies
  • Noise cancellation systems
  • Medium and large voice coil motors

Technical Attributes

Below is a tabular representation of the attributes or specifications for the HIP4082IBZ half-bridge FET gate driver:

Operating Temperature (minimum to maximum)Between -55˚C and 150˚C
Driver’s ConfigurationHalf-Bridge
Typical Rise and Fall Time9ns, 9ns
Type of ChannelIndependent
Type of InputNon-Inverting
Type of Gate DriverN-Channel MOSFET
Type of Mounting StyleSurface Mount Technology (SMT)
Number of Gate Drivers4
Maximum High Side Voltage95 volts
Voltage – SupplyBetween 8.5 volts and 15 volts

HIP4082IBZ’s Non-Inverting Input

HIP4082IBZ uses a non-inverting input. We want to explain how it works. According to StackExchange, the non-inverting input has to do with the relationship or the connection between the input and the output levels of the gate driver.

At the basis is the need to establish the right connection and balance the same. Therefore, the non-inverting input works by giving a higher output when a logic high is applied to the input. When this happens, an output low is derived from the low input.

When compared to the inverting input, the non-inverting input works by connecting the logic high to the input to get an output high, while the inverting input works by using a low input to set an output high.


HIP4082IBZ’s gate driver performs a similar function as many other gate drivers – which is the acceptance of a lower power input and producing a corresponding higher current gate drive for the target device.

However, the role of the gate driver becomes prominent following the PWM controller’s inability to provide the required output current. In the absence of this current, it wouldn’t be possible to drive the required gate capacitance of the targeted device or application.

To that end, using a gate driver like HIP4082IBZ can make all the difference. It first isolates or restricts the gate of the power device so it can take in the charged gate input capacitance. When that is done, the power device turns on only after the required gate threshold voltage is reached.




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