BLL9G1214L-600U is a Laterally-Diffused Metal-Oxide Semiconductor (LDMOS), designed for use with the L-band radar applications. The most outstanding attribute is its 600-watt power transistor capability, enabling the increment of the target applications’ frequency range up to 1.4 Gigahertz (GHz).
The Signal Switching Capabilities
By design, the FETs, RF Transistors and MOSFETs are families of devices meant to regulate current flow through devices. These devices help to control the current flow, using an electric field.
LDMOS, being of those devices, is used in BLL9G1214L-600U to switch and amplify signal and power flow through the L-band radar applications.
Device protection with Electrostatic Discharge (ESD) is offered to help increase BLL9G1214L-600U’s security. In that case, we are looking at a combined protection via the Air Gap Discharge and the Contact Discharge.
Both discharge variants aim at checking the discharge or removal of pulse from the Device Under Test (DUT).
BLL9G1214L-600U’s ESD protection is based on an integrated dual-sided protection design, which helps keep the semiconductor active, even when in off-state isolation.
BLL9G1214L-600U is optimized for the L-band applications and there are some upsides to that. L-band is a type of pulsed radar by Ampleon USA Incorporated. The company’s optimization for this is to enable the amplification of the lined-up devices (in this case, the BLL9G1214L-600U) for pulsed operations over the entire frequency band.
To that end, BLL9G1214L-600U’s L-band operation is designed to go above the 3500 MHz frequency band. Doing so makes the semiconductor ideal for the high-end pulsed radar applications.
BLL9G1214L-600U is also a rugged or robust semiconductor, capable of withstanding pressure. The information in the datasheet shows that it can withstand a load mismatch up to VSWR = 10:1.
This load mismatching can be further extended across the entire class-AB classes or specifications.
BLL9G1214L-600U is the ideal semiconductor and LDMOS for the pulsed radar devices/applications, which are based on the next-generation LDMOS and GaN technologies.
The selection of these devices is based on the longevity and durability of the target applications.
Examples of the supported applications are:
- Cooking and defrosting devices/appliances.
- Aerospace and defense applications, such as military communications, radar and electronic countermeasure devices.
- Broadcast devices, including UHF/D-TV
- Industrial, scientific and medical applications, comprising particle accelerators, and industrial heating appliances.
The table below shows some of the technical attributes of BLL9G1214L-600U’s LDMOS:
|Type of Transistor||LDMOS|
|Rated Voltage||65 volts|
|Frequency (minimum to maximum)||Between 1.2 GHz and 1.4 GHz|
|Power Output||600 Watts|
|Current (test)||400 mA|
|Current Rating (in Amps)||5µA|
BLL9G1214L-600U LDMOS Advantages
Is there any benefit to using the Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) structure for BLL9G1214L-600U? Apparently, there are a couple of reasons why it is relevant.
Here are some of the notable benefits:
1. Excellent Class-AB Operations
BLL9G1214L-600U proves to be a better choice for Class-AB operations and that is for no other reason than the higher load mismatching support.
In light of that, it is further used in the design of linear amplifiers, especially for the ones requiring improved efficiency and higher gain.
2. Idealistic Use with High-Crest Systems and Broadbands
BLL9G1214L-600U is also an ideal LDMOS for use with high-crest systems, such as WCDMA and CDMA. The usage in this case is because of the higher PAPR capabilities.
On the other hand, it performs excellently with the broadband applications, especially with the applications below 1 Gigahertz (GHz).
3. Higher Operations and Ideal for High-End Applications
BLL9G1214L-600U is also ideally used with the high-end or cost-effective Power Amplifier solutions.
The operations are also higher, as the semiconductor can clock up to 2.2 Gigahertz (GHz).
The performance is also bolstered by the delivery of the highest power rating up to 1.5 Gigahertz (GHz).
Drawbacks to BLL9G1214L-600U’s LDMOS
Although the Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) structure used with BLL9G1214L-600U is ideal, it can also have some disadvantages.
These are some of the common drawbacks:
1. Long-Term Reliability is Technical
The chances of getting long-term durability out of any of the supported applications relies on some technical factors. For one, BLL9G1214L-600U deals more with gold top metallization, which is one of the major ways to keep the applications for the long-term usage.
2. Unfavorable Performance in Some Cases
BLL9G1214L-600U’s LDMOS doesn’t so well in all scenarios. In some cases (when dealing with higher RF energy frequencies), the performance is not as prominent as that of GaN is.
LDMOS vs GaN: The Major Differences
The major difference between LDMOS and GaN is that the latter offers advanced or higher RF energy frequencies. In that case, you want to prioritize using GaN instead of LDMOS.
GaN also gains a considerable edge over LDMOS in the area of covering higher bandwidths.
Those two are the major upsides that the GaN has over LDMOS in the aspect of semiconductor development/process technology.
Now to how LDMOS compares against the GaN process technology. Here are some of the comparable benefits:
LDMOS Offers Lower Costs
High-end applications are costly already and costs can add up quickly when the components used are considered too. LDMOS appears to be a cost-effective process technology because of the low-cost approach to L-band radar applications’ design.
In this instance, it doesn’t use up much resources at the final-stage of the design, unlike the GaN, which does use drivers, whole line-ups and pre-drivers at this stage.
Besides, LDMOS are continually exploring options to minimize the costs and make it a better alternative to GaN and other types of process technologies for semiconductor devices.
LDMOS has Widespread Adoptions
Any process technology that gains relevance is subject to gaining widespread adoptions. That is what sets LDMOS apart from GaN.
Most digital circuit consumers prefer it for reasons ranging from the series of node generations, long-term performance and reliability; and the continuous improvements in the area of application-specific reliability.
To put it all together, BLL9G1214L-600U’s LDMOS is an ideal process technology for making the most-optimized, cost-effective and reliable L-band radar applications.