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  • Discrete Semiconductors 2N7002LT1G MOSFET 60V 115mA N-Channel Discrete Semiconductors 2N7002LT1G MOSFET 60V 115mA N-Channel

Discrete Semiconductors 2N7002LT1G MOSFET 60V 115mA N-Channel

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Discrete Semiconductors 2N7002LT1G MOSFET 60V 115mA N-Channel
Product Information:
RoHS: Details
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 115 mA
Rds On - Drain-Source Resistance: 7.5 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 mW
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Packaging: Reel

Availability: In stock

$0.14

Details

In assembly the bare board is populated with electronic components to form a functional printed circuit assembly (PCA), sometimes called a "printed circuit board assembly" (PCBA). In through-hole technology component leads are inserted in holes. In surface-mount technology (SMT) the components are glued on pads or lands on the surfaces of the PCB. In both component leads are then mechanically fixed and electrically connected to the board by soldering.
If there is any inquiry of Discrete Semiconductors, 2N7002LT1G & MOSFET 60V 115mA N-Channel welcome to contact with Alice by email: sales22@raypcb.com or come our factory communicate face to face, that will help run your business smoothly.

Discrete Semiconductors 2N7002LT1G MOSFET 60V 115mA N-Channel

 

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